Optimization of AlGaN∕GaN current aperture vertical electron transistor (CAVET) fabricated by photoelectrochemical wet etching
نویسندگان
چکیده
منابع مشابه
Faceted sidewall etching of n-GaN on sapphire by photoelectrochemical wet processing
A wet etch process that produces smooth sidewalls aligned with the m-plane ({1!100}) crystal facets of Ga-polar GaN grown on sapphire is demonstrated by combining photo-electrochemical (PEC) treatment with a postprocessing wet etch step. This novel process results in faceted and extremely smooth vertical etched sidewalls. This two-step process consists of a PEC treatment to define the geometry ...
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Photoelectrochemieal etching of n-InAs (Eg = 0.36 eV) is demonstrated. Although the concentration of thermally generated minority carriers and saturation current are high compared to larger bandgap semiconductors, photocurrent to dark current ratios as high as 4:1 were obtained at low temperature (2°C) and at potentials near the flatband potential. A surface film primarily composed of arsenic o...
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Anisotropic etching of silicon in potassium hydroxide (KOH) is an important technology in micromachining. The residue deposition from KOH etching of Si is typically regarded as a disadvantage of this technology. In this report, we make use of this residue as a second masking layer to fabricate two-layer complex structures. Square patterns with size in the range of 15–150 μm and gap distance of ...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2004
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.1806281